bas 40-07 oct-07-1999 1 silicon schottky diode ? general-purpose diode for high-speed switching ? circuit protection ? voltage clamping ? high-level detecting and mixing vps05178 2 1 3 4 bas 40-07 32 eha07008 1 4 type marking pin configuration package bas 40-07 47s 1=c1 2=c2 3=a2 4=a1 sot-143 maximum ratings parameter symbol value unit diode reverse voltage 40 v v r forward current i f ma 120 200 i fsm surge forward current, t 10ms total power dissipation , t s 81c 250 p tot mw junction temperature t j 150 c -55 ... 150 t op operating temperature range storage temperature t st g -55 ... 150 maximum ratings junction - ambient 1) 345 k/w r thja junction - soldering point r thjs 275 1) package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 6cm 2 cu
bas 40-07 oct-07-1999 2 electrical characteristics at t a = 25c, unless otherwise specified. parameter values symbol unit max. typ. min. dc characteristics v (br) 40 - v - breakdown voltage i (br) = 10 a i r - - - - reverse current v r = 30 v v r = 40 v a 1 10 v f - - - 310 450 720 380 500 1000 mv forward voltage i f = 1 ma i f = 10 ma i f = 40 ma ac characteristics diode capacitance v r = 0 v, f = 1 mhz c t - 4 5 pf charge carrier life time i f = 25 ma - - 100 ps differential forward resistance i f = 10 ma, f = 10 khz r f - 10 - ?
bas 40-07 oct-07-1999 3 forward current i f = f ( v f ) t a = 25c 0.0 ehb00038 bas 40... v f f 0.5 1.0 v 1.5 t a = -40 ?c 25 ?c 85 ?c 150 ?c -2 10 -1 10 ma 0 10 10 1 2 10 reverse current i r = f ( v r ) t a = parameter 0 ehb00039 bas 40... v r r 10 0 -2 10 1 10 2 10 3 10 a 10 -1 10 20 30 v 40 t a = 150 c 85 c 25 c diode capacitance c t = f ( v r ) f = 1mhz 0 0 ehb00040 bas 40... c v r t 1 2 3 4 pf 5 10 20 v 30 differential forward resistance r f = f ( i f ) f = 10 khz 0.1 ehb00041 bas 40... r f 1 10 ma 100 f ? 2 10 1 10 10 3 10 3
bas 40-07 oct-07-1999 4 forward current i f = f ( t a *; t s) * package mounted on alumina 0? c 0 ehd07068 bar 14-1...16-1 f a t ; t s 50 100 150 20 40 60 80 100 120 140 160 ma 200 t a s t
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